MOSFET DIODE Id54 BVdass800
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MOSFET DIODE Id54 BVdass800
Experience the power and reliability of the IXYS IXFN60N80P, capable of handling 1040W with an impressive 800V breaking voltage.
MOSFET DIODE Id54 BVdass800
Nº de artículo: 229845661

MOSFET DIODE Id54 BVdass800

Nº de artículo: 229845661

PAB 97

Price Details

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*All items will import from Estados Unidos

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Estados Unidos Importado de la tienda USA

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Experience the power and reliability of the IXYS IXFN60N80P, capable of handling 1040W with an impressive 800V breaking voltage.
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Detalles de producto

Package Dimensions1 x 1 x 1 inches (2.5 x 2.5 x 2.5 cm)
Item Weight1.28 ounces (36.29 grams)
Item model numberIXFN60N80P
Date First AvailableJuly 3, 2025
ManufacturerIXYS

DESCRIPCIÓN DEL PRODUCTO

MOSFET DIODE Id54 BVdass800

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Preguntas y respuestas de los clientes

  • Pregunta: What is the maximum power rating of the IXYS IXFN60N80P?

    Respuesta: The maximum power rating is 1040W.
  • Pregunta: What temperature range can this component operate in?

    Respuesta: It can operate between -55°C and +150°C.
  • Pregunta: What is the breaking voltage of the IXYS IXFN60N80P?

    Respuesta: The breaking voltage is 800V.

IXYS MOSFET IXFN60N80P Editorial Review

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PAB 97

Haz tu pedido ahora y recíbelo por ahí Martes, Septiembre 01

QTY:

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PCI DSS compliant and ISO 27001:2022 certified, with encrypted payments and full buyer protection on every order.

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Fastest cross-border delivery

características y beneficios

  • Handles a maximum power of 1040W for high-performance applications.
  • Supports a breaking voltage of 800V, ensuring robust operation.
  • Features an impressive current rating of 53A for demanding tasks.
  • Functions effectively within a broad temperature range of -55°C to +150°C.
  • Comes in a compact SOT-227B case for easy mounting.
  • Brand new components from IXYS, ensuring top quality and reliability.

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